Ferroelectric-controlled all MXene nonvolatile flexible memory devices for data storage application

Ferroelectric materials have attracted the interest of current innovation in terms of high nonvolatile storage, light weight, smart, portable, and better functioned memories. In this work, we present all MXene (Mo2TiC2Tx/FE-Ti3C2Tx/Mo2TiC2Tx) flexible memory device with substrate-free growth in ambient conditions. The surface morphology, elemental and structural analysis confirmed synthesis of the MXene sheets. X-ray diffraction, Raman, and FTIR spectra showed the presence of TiO2 inside FE-Ti3C2Tx MXene that contributed toward the ferroelectric behavior of MXene as is evident by its hysteretic polarization curves. The extraordinary device performance with 10(3) on/off ratio, significant reproducibility, visible stable behavior up to 200 cycles, and a data retention of 10(4) s demonstrate MXene's promise to be employed in ferroelectric random access memory devices.

Automated summary

This study presents a novel MXene flexible memory device with substrate-free growth in ambient conditions, which has attracted interest in current innovation due to its high nonvolatile storage, light weight, smart, portable, and better functioned memories. The synthesis of MXene sheets was confirmed through surface morphology, elemental and structural analysis. X-ray diffraction, Raman, and FTIR spectra showed the presence of TiO2 inside FE-Ti3C2Tx MXene, which contributed toward the ferroelectric behavior of MXene.