Spin relaxation time enhancement induced by polarization field screening in an InGaN/GaN quantum well

A correlation between the spin-polarized carrier transfer and spin relaxation processes of a two-dimensional electron gas (2DEG) in an InGaN/GaN quantum well (QW) is investigated by time-resolved Kerr rotation spectroscopy at low temperature. Upon resonant excitation with the GaN barrier band edge energy, the spin polarization of the 2DEG in the QW is acquired from the transfer of spin-polarized photo-excited carriers. Significantly, the spin relaxation time of the 2DEG is enhanced to be as long as 1 ns along with the carrier transfer. It is demonstrated that by tailoring the Rashba and Dresselhaus spin-orbit couplings to approach a spin-degenerate surface, the screening effect of the polarization field leads to a longer spin relaxation time and effective manipulation of the spin relaxation. The polarization field screening induced enhancement of the spin relaxation time is significant in the way for the development of GaN-based spintronic devices.

Automated summary

The correlation between spin-polarized carrier transfer and spin relaxation processes of a 2DEG in an InGaN/GaN quantum well is investigated. It is found that by tailoring the spin-orbit couplings, the spin relaxation time can be enhanced, which is significant for the development of GaN-based spintronic devices.