Ferroelectric YAlN grown by molecular beam epitaxy

We report the demonstration of ferroelectric switching in yttrium (Y)-doped nitride semiconductors. In this study, single-crystalline, wurtzite Y0.07Al0.93N films were epitaxially grown on GaN/sapphire templates by plasma-assisted molecular beam epitaxy. The ferroelectric switching process has been investigated by current density-electric field (J-E) and polarization-electric field (P-E) loops as well as positive-up-negative-down measurements, showing a coercive field of similar to 6 MV/cm and a switchable polarization of similar to 130 mu C/cm(2). Ferroelectric switching was further confirmed via butterfly shape capacitance-voltage (C-V) loops and polarity-sensitive wet etching. The realization of ferroelectric, Y-doped AlN films further extends the family of nitride ferroelectrics and unravels a wealth of intriguing opportunities in III-nitride based electronic, piezo-electronic, and optoelectronic devices.

Automated summary

We demonstrate ferroelectric switching in yttrium-doped nitride semiconductors. Yttrium 0.07Al0.93N films were grown on GaN/sapphire templates and exhibited a coercive field of 6 MV/cm and a switchable polarization of 130 mu C/cm(2). Ferroelectric switching was confirmed through capacitance-voltage loops and polarity-sensitive wet etching. This study expands the family of nitride ferroelectrics and opens up possibilities for applications in III-nitride based devices.