Related references
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Review
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Summary: This article discusses the recent progress of Ga2O3-based Schottky photodiodes and provides suggestions for Schottky metal selection, interfacial barrier modulation, space electric field adjustment, energy band engineering, and improvement of photodetection performance, aiming to promote the further development of deep-ultraviolet photodetection in the near future.
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Xiao Tang et al.
Summary: In this research, beta-Ga2O3/NiO heterostructures were directly grown on CeO2 buffered Hastelloy flexible substrates. The CeO2 buffer layer acted as a template for the epitaxial growth of single-oriented NiO and beta-Ga2O3. The resulting photodetectors on Hastelloy substrates exhibited good deformability, mechanical robustness, and high photocurrent under 284 nm light illumination.
APPLIED PHYSICS LETTERS
(2023)
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Yuexing Cheng et al.
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Gao-Hui Shen et al.
Summary: This paper introduces a 16 x 16 Ga2O3 photodetector array, in which Ga2O3 thin film was deposited on a c-sapphire substrate using metal-organic chemical vapor deposition. The array device was constructed through UV photolithography, lift-off, and electron-beam evaporation techniques. The photodetector showed good wavelength selectivity with a high rejection ratio of 8 x 10(3). It exhibited a fast response ability, with a rise time of 6 ms and a decay time of 48 ms, when excited by a laser. The dark current of the 256 pixels in the array ranged from 2 pA to 4 pA, without any disparity.
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(2023)
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Xiao Tang et al.
Summary: The study demonstrates the epitaxial growth of technically important beta-Ga2O3 semiconductor thin films on flexible CeO2(001)-buffered Hastelloy tape, leading to the fabrication of flexible photodetectors with excellent photoelectrical performance. The photodetectors exhibit a responsivity of 4 X 10(4) mA/W and remain robust after more than 20,000 bending test cycles, showing potential for future applications in flexible oxide semiconductor devices.
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(2022)
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IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
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Chemistry, Multidisciplinary
Yancheng Chen et al.
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