Solar-blind UV communication based on sensitive beta-Ga2O3 photoconductive detector array

In this work, a solar-blind UV photodetector array is fabricated and discussed, based on a metalorganic chemical vapor deposition-grown beta-Ga2O3 thin film, toward optical communication application. The high-performance photodetector unit shows a significant photo-to-dark current ratio of 3.4 x 10(5), a high responsivity of 61.3 A/W, an external quantum efficiency of 3 x 10(4)%, a specific detectivity of 5.2 x 10(14) Jones, and a fast response time of 35 ms. In addition, a solar-blind UV/visible light rejection ratio of 2.43 x 10(2) is achieved, suggesting decent spectral selectivity. For the array, the maximum photocurrent standard deviation is below 12% for every group with a similar layout arrangement. Furthermore, the dark current is at picoampere level, leading to low background noise for the optical communication system. Taking the 50% photocurrent value as the readout threshold line to avoid interference from the exterior meanwhile retaining about 500 on/off cycles, the optical communicated result shows effective outputting information NJUPT2023 coming from a total of 256 1 and 0 signals.

Automated summary

A solar-blind UV photodetector array based on a metalorganic chemical vapor deposition-grown beta-Ga2O3 thin film is fabricated for optical communication application. The device demonstrates high performance with a significant photo-to-dark current ratio, high responsivity, high external quantum efficiency, high specific detectivity, and fast response time. The array shows good spectral selectivity and low background noise, enabling effective outputting of information signals in optical communication.