Observation of interface trap reduction in fluoropolymer dielectric organic transistors by low-frequency noise spectroscopy

This study examines the low-frequency noise characteristics of the 2,7-dioctyl[1] benzothieno[3,2-b][1] benzothiophene organic thin-film transistor (OTFT) having a CYTOP dielectric layer. Specifically, the fabricated OTFT exhibits 1/f noise, and its behavior is explained via a carrier number fluctuation model. Additionally, the volume trap density (N-T) of the gate dielectric is quantitatively evaluated and compared with its counterpart having SiO2 dielectric layer. The analysis of the results shows that the hydrophilic entities of the dielectric layer strongly influence the N-T, while the CYTOP having hydrophobic properties provides less N-T than that of SiO2.

Automated summary

This study investigates the low-frequency noise characteristics of a 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene organic thin-film transistor (OTFT) with a CYTOP dielectric layer. The fabricated OTFT displays 1/f noise, which can be explained by a carrier number fluctuation model. Furthermore, the volume trap density (N-T) of the gate dielectric is quantitatively evaluated and compared with a transistor using a SiO2 dielectric layer. The results indicate that the hydrophilic nature of the dielectric layer strongly affects the N-T, with CYTOP having a lower N-T than SiO2.