☆ 4.6 Article

Extending Schottky-Mott rule to van der Waals heterostructures of 2D Janus materials: Influence of intrinsic dipoles

APPLIED PHYSICS LETTERS (2023)

Related references

Note: Only part of the references are listed.

Article Chemistry, Multidisciplinary

Mapping the Energy Landscape from a Nanocrystal-Based Field Effect Transistor under Operation Using Nanobeam Photoemission Spectroscopy

Mariarosa Cavallo et al.

Summary: As nanocrystal-based optoelectronics advances, there is a need for advanced techniques to reveal the electronic structure of nanocrystals, especially under device-relevant conditions. Previous efforts have mainly focused on optical spectroscopy and electrochemistry, which require an absolute energy reference. In this study, we explored the use of photoemission microscopy as a strategy for investigating nanocrystal-based devices in real-time. The method was found to be applicable to different materials and device geometries, providing direct access to important information such as metal-semiconductor interface band bending and gate effect propagation distance.

NANO LETTERS (2023)

Add to Collection

Article Multidisciplinary Sciences

Approaching the quantum limit in two-dimensional semiconductor contacts

Weisheng Li et al.

Summary: By hybridizing with semi-metallic antimony (0112) through strong van der Waals interactions, the electrical contact of monolayer molybdenum disulfide is improved, meeting the requirements for the development of next-generation electronics.

NATURE (2023)

Add to Collection

Article Chemistry, Multidisciplinary

Oxygen-Induced Barrier Lowering for High-Performance Organic Field-Effect Transistors

Yao Fu et al.

Summary: Organic field-effect transistors (OFETs) have the advantages of low-cost, large-area processing and could be utilized in a variety of emerging applications. This study introduced oxygen (O-2) into the nanointerface between the electrodes and organic semiconductor layer, lowering the barrier and effectively reducing the contact resistance (R (c)). The results demonstrated the possibility of constructing high-performance OFETs with ultralow R (c) and high mobility.

ACS NANO (2023)

Add to Collection

Article Physics, Applied

Ohmic contacts in MXene/MoSi2N4 heterojunctions

Xiang Zhang et al.

Summary: By using first-principles quantum transport simulations, the difference between the intrinsic band edges of pristine MoSi2N4 and the work function of pristine MXenes is found to play a major role in the Schottky barrier heights of vertical contacts. Phase diagrams of Schottky barrier heights dependent on metal work function are established, facilitating the screening of Ohmic contacts. Nine MXene/MoSi2N4 heterojunctions are selected as demos, showing the potential of fabricating coherent dopant-free all-2D devices based on MXene/MoSi2N4 contacts and delivering a general strategy for fast screening efficient Ohmic contacts.

APPLIED PHYSICS LETTERS (2023)

Add to Collection

Article Chemistry, Physical

Two-Dimensional Metal/Semiconductor Contact in a Janus MoSH/MoSi2N4 van der Waals Heterostructure

Chuong Nguyen et al.

Summary: We have successfully synthesized single-layer metallic Janus MoSH and semiconducting MoSi2N4 and investigated their electronic and interfacial features. The metal/semiconductor MoSH/MoSi2N4 contact forms a p-type Schottky contact with a small Schottky barrier. Furthermore, we found that the electronic structure and interfacial features of the MoSH/MoSi2N4 vdW heterostructure can be tuned under strain and electric fields.

JOURNAL OF PHYSICAL CHEMISTRY LETTERS (2022)

Add to Collection

Article Materials Science, Multidisciplinary

Growth of two-dimensional Janus MoSSe by a single in situ process without initial or follow-up treatments

Chan Wook Jang et al.

Summary: This study presents a new method for fabricating two-dimensional Janus transition metal dichalcogenides using chemical vapor deposition. By controlling the temperature and employing sodium chloride as a catalyst, this single-step process offers a simple and cost-effective approach for growing these materials, making them more useful for fundamental studies and device applications.

NPG ASIA MATERIALS (2022)

Add to Collection

Article Physics, Applied

Symmetry-Breaking-Induced Multifunctionalities of Two-Dimensional Chromium-Based Materials for Nanoelectronics and Clean Energy Conversion

Lei Li et al.

Summary: Breaking inversion symmetry can achieve multiple functionalities in two-dimensional chromium-based materials, such as gapless spin, low work function, inducing carrier doping, and catalytic activity. These functionalities are predominantly attributed to the large intrinsic dipole of Janus Cr2NY monolayers, which have great potential for various applications.

PHYSICAL REVIEW APPLIED (2022)

Add to Collection

Article Physics, Applied

Stacking-order-dependent interlayer coupling in Janus WSSe/WS2 heterostructures

Ufuk Erkilic et al.

Summary: The study demonstrates that Janus TMDCs can effectively manipulate interlayer interactions and optical properties in heterostructures through intrinsic fields. The stacking order affects interlayer coupling and photoluminescence performance, with the electric field at the S/S interface promoting charge transfer and at the S/Se interface blocking it.

APPLIED PHYSICS LETTERS (2022)

Add to Collection

Article Materials Science, Multidisciplinary

Electronic and spintronic properties of Janus MSi2PxAsy (M = Mo, W) monolayers

Amirhossein Rezavand et al.

Summary: This study reports 12 novel Janus MSi2PxAsy structures, which demonstrate excellent stability and significant potential in spintronics and valleytronics applications. The research shows that these structures exhibit semiconductor characteristics, piezoelectric coefficients, and spin and valley polarization, making them promising candidates for future electronic technologies.

PHYSICAL REVIEW B (2022)

Add to Collection

Article Physics, Applied

Two-dimensional van der Waals electrical contact to monolayer MoSi2N4

Liemao Cao et al.

Summary: This study investigates van der Waals heterostructures composed of MoSi2N4 contacted by graphene and NbS2 monolayers using first-principles density functional theory calculations. The results reveal an ultralow Schottky barrier height at the MoSi2N4/NbS2 contact, beneficial for nanoelectronics applications, and show that the Schottky barrier height at the MoSi2N4/graphene contact can be modulated through interlayer distance or external electric fields, opening up opportunities for reconfigurable and tunable nanoelectronic devices.

APPLIED PHYSICS LETTERS (2021)

Add to Collection

Article Physics, Applied

Engineering Schottky-to-Ohmic contact transition for 2D metal-semiconductor junctions

Xiang Ding et al.

Summary: Research indicates that the formation of Ohmic contacts for 2D materials is crucial for high-performance electronic devices, with current studies mostly focused on the Schottky regime. Density functional calculations have identified a Schottky-to-Ohmic contact transition boundary and demonstrated stable p-type Ohmic contacts. Weak Fermi level pinning effect in the Schottky region and strong pinning-like behavior in the Ohmic region are observed, with a discontinuity near the contact transition boundary.

APPLIED PHYSICS LETTERS (2021)

Add to Collection

Article Chemistry, Physical

Stable Janus TaSe2 single-layers via surface functionalization

Z. Kahraman et al.

Summary: The study reveals that single-layer TaSe2 can form symmetric and asymmetric Janus structures through surface functionalization such as hydrogenation and fluorination, exhibiting semiconductor or metallic properties. Under uniaxial strains, the properties of single-layer TaSe2 remain robust, while the Janus structure shows enhanced piezoelectricity. This suggests that TaSe2 can serve as a suitable host material with rich possibilities for surface functionalization and unique electronic properties.

APPLIED SURFACE SCIENCE (2021)

Add to Collection

Article Physics, Applied

Dipole Engineering of Two-Dimensional van der Waals Heterostructures for Enhanced Power-Conversion Efficiency: The Case of Janus Ga2SeTe/InS

Kun Liang et al.

Summary: Efficient separation of tightly bound excitons at a 2D interface is crucial for high-performance heterostructure solar cells. The proposed dipole engineering strategy based on intrinsic and interface dipoles can enhance power conversion efficiency. Using the Janus Ga2SeTe/InS heterostructure as an example, a peak power conversion efficiency of 23.2% was achieved with the synergistic effect of dipoles and applied compression strain.

PHYSICAL REVIEW APPLIED (2021)

Add to Collection

Article Multidisciplinary Sciences

Ultralow contact resistance between semimetal and monolayer semiconductors

Pin-Chun Shen et al.

Summary: The article discusses achieving ohmic contact between semimetallic bismuth and semiconducting monolayer transition metal dichalcogenides, suppressing metal-induced gap states and significantly reducing contact resistance. Experimental results demonstrate zero Schottky barrier height and high on-state current density on multilayer MoS2.

NATURE (2021)

Add to Collection

Article Physics, Applied

High-throughput computational design for 2D van der Waals functional heterostructures: Fragility of Anderson's rule and beyond

Yuan Si et al.

Summary: The current high-throughput design framework tends to omit potential candidates in specific fields, causing statistical deviation. The fragility of this framework is mainly attributed to interlayer orbital coupling.

APPLIED PHYSICS LETTERS (2021)

Add to Collection

Article Nanoscience & Nanotechnology

Dipole-induced Ohmic contacts between monolayer Janus MoSSe and bulk metals

Ning Zhao et al.

Summary: By first-principles calculations, it is found that monolayer Janus MoSSe exhibits different Fermi level pinning on its two sides when in contact with different metallic electrodes. However, both sides can form Ohmic contacts with common electrode materials, which is a significant advantage over MoS2 and MoSe2.

NPJ 2D MATERIALS AND APPLICATIONS (2021)

Add to Collection

Article Nanoscience & Nanotechnology

Van der Waals Contact to 2D Semiconductors with a Switchable Electric Dipole: Achieving Both n- and p-Type Ohmic Contacts to Metals with a Wide Range of Work Functions

Yangfan Shao et al.

ADVANCED ELECTRONIC MATERIALS (2020)

Add to Collection

Article Multidisciplinary Sciences

General synthesis of two-dimensional van der Waals heterostructure arrays

Jia Li et al.

NATURE (2020)

Add to Collection

Article Chemistry, Physical

Origin of Weaker Fermi Level Pinning and Localized Interface States at Metal Silicide Schottky Barriers

Zhaofu Zhang et al.

JOURNAL OF PHYSICAL CHEMISTRY C (2020)

Add to Collection

Article Multidisciplinary Sciences

Chemical vapor deposition of layered two-dimensional MoSi2N4 materials

Yi-Lun Hong et al.

SCIENCE (2020)

Add to Collection

Article Multidisciplinary Sciences

Van der Waals contacts between three-dimensional metals and two-dimensional semiconductors

Yan Wang et al.

NATURE (2019)

Add to Collection

Article Chemistry, Multidisciplinary

Gate-Tunable Graphene-WSe2 Heterojunctions at the Schottky-Mott Limit

Samuel W. LaGasse et al.

ADVANCED MATERIALS (2019)

Add to Collection

Article Chemistry, Multidisciplinary

Controllable P- and N-Type Conversion of MoTe2 via Oxide Interfacial Layer for Logic Circuits

Yong Ju Park et al.

SMALL (2019)

Add to Collection

Article Physics, Applied

Janus PtSSe and graphene heterostructure with tunable Schottky barrier

Liemao Cao et al.

APPLIED PHYSICS LETTERS (2019)

Add to Collection

Article Nanoscience & Nanotechnology

Oxidized-monolayer tunneling barrier for strong Fermi-level depinning in layered InSe transistors

Yi-Hsun Chen et al.

NPJ 2D MATERIALS AND APPLICATIONS (2019)

Add to Collection

Review Chemistry, Multidisciplinary

Contact engineering for 2D materials and devices

Daniel S. Schulman et al.

CHEMICAL SOCIETY REVIEWS (2018)

Add to Collection

Article Chemistry, Physical

Tuning the Schottky rectification in graphene-hexagonal boron nitride-molybdenum disulfide heterostructure

Biao Liu et al.

JOURNAL OF COLLOID AND INTERFACE SCIENCE (2018)

Add to Collection

Article Multidisciplinary Sciences

Approaching the Schottky-Mott limit in van der Waals metal-semiconductor junctions

Yuan Liu et al.

NATURE (2018)

Add to Collection

Article Chemistry, Multidisciplinary

Stacked Janus Device Concepts: Abrupt pn-Junctions and Cross-Plane Channels

Mattias Palsgaard et al.

NANO LETTERS (2018)

Add to Collection

Article Nanoscience & Nanotechnology

Janus monolayers of transition metal dichalcogenides

Ang-Yu Lu et al.

NATURE NANOTECHNOLOGY (2017)

Add to Collection

Article Chemistry, Multidisciplinary

Janus Monolayer Transition-Metal Dichalcogenides

Jing Zhang et al.

ACS NANO (2017)

Add to Collection

Article Physics, Applied

Contact resistivities of metal-insulator-semiconductor contacts and metal-semiconductor contacts

Hao Yu et al.

APPLIED PHYSICS LETTERS (2016)

Add to Collection

Article Multidisciplinary Sciences

Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier

Yuanyue Liu et al.

SCIENCE ADVANCES (2016)

Add to Collection

Article Materials Science, Multidisciplinary

First-principles study of van der Waals interactions and lattice mismatch at MoS2/metal interfaces

Mojtaba Farmanbar et al.

PHYSICAL REVIEW B (2016)

Add to Collection

Review Chemistry, Physical

Electrical contacts to two-dimensional semiconductors

Adrien Allain et al.

NATURE MATERIALS (2015)

Add to Collection

Article Materials Science, Multidisciplinary

Controlling the Schottky barrier at MoS2/metal contacts by inserting a BN monolayer

Mojtaba Farmanbar et al.

PHYSICAL REVIEW B (2015)

Add to Collection

Review Optics

Two-dimensional material nanophotonics

Fengnian Xia et al.

NATURE PHOTONICS (2014)

Add to Collection

Article Physics, Applied

Schottky barrier height of Au on the transparent semiconducting oxide β-Ga2O3

M. Mohamed et al.

APPLIED PHYSICS LETTERS (2012)

Add to Collection

Article Chemistry, Physical

A consistent and accurate ab initio parametrization of density functional dispersion correction (DFT-D) for the 94 elements H-Pu

Stefan Grimme et al.

JOURNAL OF CHEMICAL PHYSICS (2010)

Add to Collection

Article Chemistry, Physical

Energy band gaps and lattice parameters evaluated with the Heyd-Scuseria-Ernzerhof screened hybrid functional

J Heyd et al.

JOURNAL OF CHEMICAL PHYSICS (2005)

Add to Collection

© Peeref 2019-2024. All rights reserved.