Related references
Note: Only part of the references are listed.High gain, low noise 1550 nm GaAsSb/AlGaAsSb avalanche photodiodes
S. Lee et al.
OPTICA (2023)
Anomalous excess noise behavior in thick Al0.85Ga0.15As0.56Sb0.44 avalanche photodiodes
Harry I. J. Lewis et al.
SCIENTIFIC REPORTS (2023)
Random alloy thick AlGaAsSb avalanche photodiodes on InP substrates
S. Lee et al.
APPLIED PHYSICS LETTERS (2022)
Weibull-Frechet random path length model for avalanche gain and noise in photodiodes
Duu Sheng Ong et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2022)
Impact Ionization Coefficients of Digital Alloy and Random Alloy Al0.85Ga0.15As0.56Sb0.44 in a Wide Electric Field Range
Bingtian Guo et al.
JOURNAL OF LIGHTWAVE TECHNOLOGY (2022)
Evaluation of the High Altitude Lidar Observatory (HALO) methane retrievals during the summer 2019 ACT-America campaign
Rory A. Barton-Grimley et al.
ATMOSPHERIC MEASUREMENT TECHNIQUES (2022)
Low noise Al0.85Ga0.15As0.56Sb0.44 avalanche photodiodes on InP substrates
S. Lee et al.
APPLIED PHYSICS LETTERS (2021)
AlInAsSb avalanche photodiodes on InP substrates
S. H. Kodati et al.
APPLIED PHYSICS LETTERS (2021)
Lidar for Autonomous Driving: The Principles, Challenges, and Trends for Automotive Lidar and Perception Systems
You Li et al.
IEEE SIGNAL PROCESSING MAGAZINE (2020)
Engineering of impact ionization characteristics in In0.53Ga0.47As/Al0.48In0.52As superlattice avalanche photodiodes on InP substrate
S. Lee et al.
SCIENTIFIC REPORTS (2020)
Exact Analytical Formula for the Excess Noise Factor for Mixed Carrier Injection Avalanche Photodiodes
Md. Mottaleb Hossain et al.
JOURNAL OF LIGHTWAVE TECHNOLOGY (2019)
Extremely low excess noise and high sensitivity AlAs0.56Sb0.44 avalanche photodiodes
Xin Yi et al.
NATURE PHOTONICS (2019)
Digital Alloy InAlAs Avalanche Photodiodes
Jiyuan Zheng et al.
JOURNAL OF LIGHTWAVE TECHNOLOGY (2018)
Demonstration of large ionization coefficient ratio in AlAs0.56Sb0.44 lattice matched to InP
Xin Yi et al.
SCIENTIFIC REPORTS (2018)
Temperature dependence of the ionization coefficients of InAlAs and AlGaAs digital alloys
Yuan Yuan et al.
PHOTONICS RESEARCH (2018)
Linear-Mode HgCdTe Avalanche Photodiodes for Photon-Counting Applications
William Sullivan et al.
JOURNAL OF ELECTRONIC MATERIALS (2015)
Low Noise Avalanche Photodiodes Incorporating a 40 nm AlAsSb Avalanche Region
Chee Hing Tan et al.
IEEE JOURNAL OF QUANTUM ELECTRONICS (2012)
Excess Noise Characteristics of Thin AlAsSb APDs
Jingjing Xie et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2012)
The experimental investigation on dark current for InGaAs-InP avalanche photodiodes
Yanli Zhao et al.
MICROELECTRONIC ENGINEERING (2012)
GaN Avalanche Photodectors: A Full Band Monte Carlo Study of Gain, Noise and Bandwidth
Michele Moresco et al.
IEEE JOURNAL OF QUANTUM ELECTRONICS (2011)
InAlAs Avalanche Photodiode With Type-II Superlattice Absorber for Detection Beyond 2 μm
Daniel S. G. Ong et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2011)
Nonlocal impact ionization and avalanche multiplication
G. J. Rees et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2010)
Avalanche multiplication in InAlAs
Y. L. Goh et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2007)
Long-wavelength In0.53Ga0.47As-In0.52Al0.48As large-area avalanche photodiodes and arrays
XG Zheng et al.
IEEE JOURNAL OF QUANTUM ELECTRONICS (2004)
InGaAs/InAlAs avalanche photodiode with undepleted absorber
N Li et al.
APPLIED PHYSICS LETTERS (2003)
Impact ionization characteristics of III-V semiconductors for a wide range of multiplication region thicknesses
P Yuan et al.
IEEE JOURNAL OF QUANTUM ELECTRONICS (2000)