Numerical calculation method for the mean free path of single-mode semiconductor nanosheets with surface roughness

A numerical calculation method is proposed to compute the transport mean free path of single-mode semiconductor nanosheets with surface roughness, where the mean free path is extracted from the statistical average of the logarithm of the dimensionless resistance. The present method requires only a computationally less demanding coherent transmission probability, and is applicable to wider channel length ranges from the quasi-ballistic to the localization regime. The channel thickness, T w, dependence of the mean free path calculated by the proposed method within the effective mass approximation shows the well-known T W 6 dependence for thicker T w, while it becomes weaker for thinner T w.

Automated summary

A numerical calculation method is proposed to compute the transport mean free path of semiconductor nanosheets with surface roughness. The method extracts the mean free path from the statistical average of the logarithm of the dimensionless resistance. It is applicable to a wide range of channel length and shows a dependence on the channel thickness.