Heteroepitaxial growth of β-Ga2O3 thin films on single crystalline diamond (111) substrates by radio frequency magnetron sputtering

In this work, we demonstrate the first achievement in heteroepitaxial growth of beta-Ga2O3 thin films on single crystalline diamond (111) wafers using RF magnetron sputtering. A single monoclinic (beta-phase) structure with a monofamily { 2 over bar 01} plane was obtained. XRD pole figure shows ( 2 02) and (002) textures of the ( 2 01) beta-Ga2O3 plane parallel to (111) diamond with six distinct rotational domains, confirming successful epitaxial growth. Collectively, this research provides valuable insights into the epitaxial growth of beta-Ga2O3 on diamond via sputtering, paving the way for scalable beta-Ga2O3 /diamond heterostructures for future electronic and optoelectronic applications with not only high performance but also effective self-thermal management.

Automated summary

In this study, the heteroepitaxial growth of β-Ga2O3 thin films on single crystalline diamond (111) wafers using RF magnetron sputtering is demonstrated. The obtained thin films show a single monoclinic (beta-phase) structure with a monofamily { 2 over bar 01} plane. XRD pole figure analysis confirms the successful epitaxial growth of β-Ga2O3 on diamond. This research provides valuable insights for the future development of scalable β-Ga2O3/diamond heterostructures with high performance and effective self-thermal management.