High Q-Factor and Low Threshold Continuous-Wave Near-Infrared Lasing with Quasi-2D Perovskites

Quasi-2D perovskites have shown great potential in achieving solution-processed electrically pumped laser diodes due to their multiple-quantum-well structure, which induces a carrier cascade process that can significantly enhance population inversion. However, continuous-wave (CW) optically pumped lasing has yet to be achieved with near-infrared (NIR) quasi-2D perovskites due to the challenges in obtaining high-quality quasi-2D films with suitable phase distribution and morphology. This study regulates the crystallization of a NIR quasi-2D perovskite ((NMA)(2)FA(n-1)Pb(n)I(3n+1)) using an 18-crown-6 additive, resulting in a compact and smooth film with a largely improved carrier cascade efficiency. The amplified spontaneous emission threshold of the film is reduced from 47.2 to 35.9 & mu;J cm(-2). Furthermore, by combining the film with a high-quality distributed feedback grating, this study successfully realizes a CW NIR laser of 809 nm at 110 K, with a high Q-factor of 4794 and a low threshold of 911.6 W cm(-2). These findings provide an important foundation for achieving electrically pumped laser diodes based on the unique quasi-2D perovskites.

Automated summary

By regulating the crystallization of a NIR quasi-2D perovskite using an 18-crown-6 additive, a compact and smooth film with greatly improved carrier cascade efficiency was obtained. By combining the film with a high-quality distributed feedback grating, a CW NIR laser of 809 nm at 110 K was successfully realized, with a high Q-factor of 4794 and a low threshold of 911.6 W cm(-2). These findings provide an important foundation for achieving electrically pumped laser diodes based on the unique quasi-2D perovskites.