Related references
Note: Only part of the references are listed.Direct Observation of Oxygen Ion Dynamics in a WO3-x based Second-Order Memristor with Dendritic Integration Functions
Ya Lin et al.
ADVANCED FUNCTIONAL MATERIALS (2023)
Mechanism-based tuning of room-temperature ferromagnetism in Mn-doped β-Ga2O3 by annealing atmosphere
Xu Dai et al.
JOURNAL OF THE AMERICAN CERAMIC SOCIETY (2023)
Polymer-assisted deposition and room-temperature ferromagnetism of amorphous Mn-doped gallium oxide films
Xu Dai et al.
SCRIPTA MATERIALIA (2022)
Structure-dependent high-TC ferromagnetism in Mn-doped GeSe
Deren Li et al.
NANOSCALE (2022)
High performance photoresponse of transparent β-Ga2O3 film prepared by polymer-assisted deposition
Xu Dai et al.
MATERIALS LETTERS (2021)
High-Quality Single-Crystalline β-Ga2O3 Nanowires: Synthesis to Nonvolatile Memory Applications
Chandrasekar Sivakumar et al.
NANOMATERIALS (2021)
Resistive Switching Behavior of Titanium Oxynitride Fabricated Using a Thermal Nitridation Process
Chih-Chieh Hsu et al.
IEEE ELECTRON DEVICE LETTERS (2021)
Bipolar resistive switching of Pt/Ga2O3-x/SiC/Pt thin film with ultrahigh OFF/ON resistance ratios
Xia Shen et al.
NANOTECHNOLOGY (2020)
The possibility of N-P codoping to realize P type β-Ga2O3
Ling Li et al.
SUPERLATTICES AND MICROSTRUCTURES (2020)
Atomic Layer Deposition of Ga2O3/ZnO Composite Films for High-Performance Forming-Free Resistive Switching Memory
Xing Li et al.
ACS APPLIED MATERIALS & INTERFACES (2020)
High Curie Temperature Ferromagnetism and High Hole Mobility in Tensile Strained Mn-Doped SiGe Thin Films
Huanming Wang et al.
ADVANCED FUNCTIONAL MATERIALS (2020)
VLS growth of pure and Au decorated β-Ga2O3 nanowires for room temperature CO gas sensor and resistive memory applications
Tzu-Feng Weng et al.
APPLIED SURFACE SCIENCE (2020)
Self-Assembled Networked PbS Distribution Quantum Dots for Resistive Switching and Artificial Synapse Performance Boost of Memristors
Xiaobing Yan et al.
ADVANCED MATERIALS (2019)
Charge Transition of Oxygen Vacancies during Resistive Switching in Oxide-Based RRAM
Jihang Lee et al.
ACS APPLIED MATERIALS & INTERFACES (2019)
The future of electronics based on memristive systems
Mohammed A. Zidan et al.
NATURE ELECTRONICS (2018)
Direct Observations of Nanofilament Evolution in Switching Processes in HfO2-Based Resistive Random Access Memory by In Situ TEM Studies
Chao Li et al.
ADVANCED MATERIALS (2017)
An Optically Readable InGaN/GaN RRAM
K. Zheng et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2016)
Resistive switching memories based on metal oxides: mechanisms, reliability and scaling
Daniele Ielmini
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2016)
Abnormal bipolar resistive switching behavior in a Pt/GaO1.3/Pt structure
D. Y. Guo et al.
APPLIED PHYSICS LETTERS (2015)
Interface induced transition from bipolar resistive switching to unipolar resistive switching in Au/Ti/GaOx/NiOx/ITO structures
X. L. Chu et al.
RSC ADVANCES (2015)
Room temperature ferromagnetism in (Ga1-xMnx)2O3 epitaxial thin films
Daoyou Guo et al.
JOURNAL OF MATERIALS CHEMISTRY C (2015)
Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology
Haitao Sun et al.
ADVANCED FUNCTIONAL MATERIALS (2014)
Highly transparent bipolar resistive switching memory with In-Ga-Zn-O semiconducting electrode in In-Ga-Zn-O/Ga2O3/In-Ga-Zn-O structure
X. B. Yan et al.
APPLIED PHYSICS LETTERS (2014)
Bulk mixed ion electron conduction in amorphous gallium oxide causes memristive behaviour
Yoshitaka Aoki et al.
NATURE COMMUNICATIONS (2014)
Resistive Switching and Magnetic Modulation in Cobalt-Doped ZnO
Guang Chen et al.
ADVANCED MATERIALS (2012)
Observing quantized conductance steps in silver sulfide: Two parallel resistive switching mechanisms
Jelmer J. T. Wagenaar et al.
JOURNAL OF APPLIED PHYSICS (2012)
Enhancing the Curie Temperature of Ferromagnetic Semiconductor (Ga,Mn)As to 200 K via Nanostructure Engineering
Lin Chen et al.
NANO LETTERS (2011)
Li(Zn,Mn)As as a new generation ferromagnet based on a I-II-V semiconductor
Z. Deng et al.
NATURE COMMUNICATIONS (2011)
Effect of top electrode materials on bipolar resistive switching behavior of gallium oxide films
Xu Gao et al.
APPLIED PHYSICS LETTERS (2010)
Comprehensive modeling of resistive switching in the Al/TiOx/TiO2/Al heterostructure based on space-charge-limited conduction
Sungho Kim et al.
APPLIED PHYSICS LETTERS (2010)
The missing memristor found
Dmitri B. Strukov et al.
NATURE (2008)
Nanoionics-based resistive switching memories
RaineR Waser et al.
NATURE MATERIALS (2007)
Resistive switching mechanism in ZnxCd1-xS nonvolatile memory devices
Zheng Wang et al.
IEEE ELECTRON DEVICE LETTERS (2007)
Donor impurity band exchange in dilute ferromagnetic oxides
JMD Coey et al.
NATURE MATERIALS (2005)
Anisotropic ferromagnetism in substituted zinc oxide
M Venkatesan et al.
PHYSICAL REVIEW LETTERS (2004)
Donor structure and electric transport mechanism in β-Ga2O3 -: art. no. 155207
M Yamaga et al.
PHYSICAL REVIEW B (2003)
Ferromagnetism above room temperature in bulk and transparent thin films of Mn-doped ZnO
P Sharma et al.
NATURE MATERIALS (2003)
A group-IV ferromagnetic semiconductor:: MnxGe1-x
YD Park et al.
SCIENCE (2002)