High-Performance Multi-Resonance Thermally Activated Delayed Fluorescence Emitters for Narrowband Organic Light-Emitting Diodes

Multi-resonance thermally activated delayed fluorescence (MR-TADF) emitters have drawn considerable attention because of their remarkable optoelectronic properties of high emission efficiency and narrow emission profile, and represent an active subject of cutting-edge research in the organic electroluminescence (EL). However, the slow reverse intersystem crossing (RISC) rate of MR-TADF emitter caused by the large energy gap (& UDelta;E-ST) and small spin-orbit coupling (SOC) matrix elements between the singlet and triplet excited states limits their further development in organic EL devices. Currently, innovative molecular design strategies have been developed including heavy atom integration, & pi;-extended MR framework and metal perturbation, and so on to improve the RISC process of MR-TADF emitters for high-performance EL devices. Here, an overview is presented on the recent progress of MR-TADF emitters with fast RISC rate ( > 10(-5) s(-1)), with particular attention to the molecular design, optoelectronic properties, and device performance of organic light-emitting diodes (OLEDs), which intends to systematize the knowledge in this subject for the thriving development of highly efficient MR-TADF emitters. Finally, the challenges and future prospects of MR-TADF materials are discussed comprehensively.

Automated summary

Multi-resonance thermally activated delayed fluorescence (MR-TADF) emitters have received significant attention for their high emission efficiency and narrow emission profile, making them a hot topic in organic electroluminescence (EL) research. However, the slow reverse intersystem crossing (RISC) rate of MR-TADF emitters due to the large energy gap (ΔE-ST) and small spin-orbit coupling (SOC) matrix elements between singlet and triplet excited states hinders their further development in organic EL devices. Innovative molecular design strategies, including heavy atom integration, π-extended MR frameworks, and metal perturbation, have been developed to enhance the RISC process of MR-TADF emitters for high-performance EL devices. This article provides an overview of the recent progress in MR-TADF emitters with fast RISC rates (> 10(-5) s(-1)), focusing on molecular design, optoelectronic properties, and device performance of organic light-emitting diodes (OLEDs), with the aim of systematizing knowledge in this field for the thriving development of highly efficient MR-TADF emitters. Finally, the challenges and future prospects of MR-TADF materials are comprehensively discussed.