Supple Formamidinium-Based Low-Dimension Perovskite Derivative for Sensitive and Ultrastable X-ray Detection

Halide perovskite materials possessexcellent optoelectronicpropertiesand have shown great potential for direct X-ray detection. Perovskitewafers are particularly attractive among various detection structuresdue to their scalability and ease of preparation, making them themost promising candidates for X-ray detection and array imaging applications.However, device instability and current drift caused by ionic migrationare persistent challenges for perovskite detectors, especially inpolycrystalline wafers with numerous grain boundaries. In this study,we examined the potential of one-dimensional (1D) & delta;-phase (yellowphase) formamidinium lead iodide (& delta;-FAPbI(3)) as anX-ray detection material. This material possesses a suitable bandgap of 2.43 eV, which makes it highly promising for X-ray detectionand imaging using compact wafers. Moreover, we found that & delta;-FAPbI(3) has low ionic migration, low Young's modulus, andexcellent long-term stability, making it an ideal candidate for high-performanceX-ray detection. Notably, the yellow phase perovskite derivative exhibitsexceptional long-term atmospheric stability (RH of & AP;70 & PLUSMN;5%) over six months, as well as an extremely low dark current drift(3.43 x 10(-4) pA cm(-1) s(-1) V-1), which is comparable to thatof single-crystal devices. An X-ray imager with a large-size & delta;-FAPbI(3) wafer integrated on a thin film transistor (TFT) backplanewas further fabricated. Direct 2D multipixel radiographic imagingwas successfully performed, demonstrating the feasibility of & delta;-FAPbI(3) wafer detectors for sensitive and ultrastable imaging applications.

Automated summary

In this study, the potential of one-dimensional (1D) delta-phase formamidinium lead iodide (& delta;-FAPbI(3)) as an X-ray detection material was examined. It was found that & delta;-FAPbI(3) possesses suitable bandgap, low ionic migration, low Young's modulus, and excellent long-term stability, making it an ideal candidate for high-performance X-ray detection. Moreover, an X-ray imager with a large-size & delta;-FAPbI(3) wafer integrated on a thin film transistor (TFT) backplane was successfully fabricated, demonstrating the feasibility of & delta;-FAPbI(3) wafer detectors for sensitive and ultrastable imaging applications.