Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 15, Issue 43, Pages 50302-50311Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.3c12973
Keywords
rhenium diselenide; field-effect transistor; Schottky barrier; photoconductivity; temperature; pressure
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The electrical behavior and photoresponse of rhenium disulfide field-effect transistors (FETs) with Cr-Au contacts were investigated, and their temperature-dependent characteristics were studied. The photocurrent was found to increase with temperature and showed a linear dependence on the incident light power at low and room temperatures, with longer rise/decay time at higher temperatures.
The electrical behavior and the photoresponse of rhenium disulfide field-effect transistors (FETs) have been widely studied; however, only a few works have investigated the photocurrent as a function of temperature. In this paper, we perform the electrical characterization of few-layer ReS2-based FETs with Cr-Au contacts over a wide temperature range. We exploit the temperature-dependent transfer and output characteristics to estimate the effective Schottky barrier at the Cr-Au/ReS2 interface and to investigate the temperature behavior of parameters, such as the threshold voltage, carrier concentration, mobility, and subthreshold swing. Through time-resolved photocurrent measurements, we show that the photocurrent increases with temperature and exhibits a linear dependence on the incident light power at both low and room temperatures and a longer rise/decay time at higher temperatures. We surmise that the photocurrent is affected by the photobolometric effect and light-induced desorption of adsorbates which are facilitated by the high temperature and the low pressure.
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