Achieving High-Performance Self-Powered Visible-Blind Ultraviolet Photodetection Using Alloy Engineering

The exploration and development of self-powered visible-blind ultraviolet photodetectors (VBUV PDs) with high responsivity and wavelength selectivity have far-reaching significance for versatile applications. Although In2O3 shows potential for UV detection due to good UV absorption and electrical transport properties, the poor wavelength selectivity impedes further application in VBUV PDs. Here, a self-powered photoelectrochemical-type (PEC) VBUV PD is demonstrated by using galliumindium oxide alloys (Ga-In OAs). The self-powered Ga-In OAsbased PEC VBUV PDs exhibit good VBUV photodetection performance, including a high responsivity of 50.04 mA/W and a high detectivity of 6.03 x 10(10) Jones under 254 nm light irradiation, a good wavelength selectivity (UV/visible light rejection ratio of 262.45), and a fast response time (0.45/0.38 s). The good self-powered VBUV detection performance of GaIn OAs is attributed to the larger band gap and smaller charge-transfer resistance induced by alloy engineering, which not only suppresses the absorption of visible light but also accelerates interfacial charge transfer. Moreover, an underwater optical communication system is demonstrated by using the self-powered Ga-In OAs PEC VBUV PDs. This study demonstrates that alloy engineering is a powerful tool to improve the performance of In2O3-based PEC PDs, and Ga-In OAs have great application potential for underwater optoelectronic devices.

Automated summary

The development of self-powered visible-blind ultraviolet photodetectors (VBUV PDs) with high responsivity and wavelength selectivity is important for versatile applications. The use of gallium-indium oxide alloys (Ga-In OAs) in a self-powered photoelectrochemical-type (PEC) VBUV PD has demonstrated good photodetection performance, including high responsivity and wavelength selectivity. The study also shows the potential application of Ga-In OAs in underwater optoelectronic devices.