Journal
ACS APPLIED MATERIALS & INTERFACES
Volume -, Issue -, Pages -Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.3c08979
Keywords
spin-orbit torque; ferrimagnet; current-inducedmagnetization switching; chiral domain wall
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Nano- and microstructures based on ferrimagnets can achieve efficient magnetization switching and stable spin textures. In this study, we experimentally demonstrate the local realization of compensation state using nonuniform Joule heating. By applying current pulses, it is possible to induce spin-orbit torques in opposite directions, resulting in local magnetization switching. These findings provide an alternative approach for engineering advanced ferrimagnetic nanodevices.
Nano- and microstructures based on ferrimagnets can demonstrate high efficiency and dynamics of current-induced magnetization switching combined with high stability of spin textures such as bubble domains and skyrmions, which are of practical importance for the development of spintronics and spin-orbitronics. This set of features is usually associated with magnetic momentum or angular momentum compensation states. Here, we experimentally show that the compensation state can be realized locally using nonuniform Joule heating. This effect is observed in the variable-width current guide made of the ferrimagnetic W/Co76Tb24/Ru thin films, where the position of a region heated to the compensation temperature depends linearly on the current pulse amplitude. This approach makes it possible to observe the simultaneous coexistence of Co-dominant and Tb-dominant regions, where current pulses induce spin-orbit torques in opposite directions, leading to local magnetization switching. It is found that the position of a Ne ' el domain wall constraining the switched region lies in the vicinity of the coordinate corresponding to the compensation point but does not coincide with it due to high mobility under the action of spin current. Our findings open an alternative approach for engineering of ferrimagnetic nanodevices with advanced properties for future applications in spintronics, spin-orbitronics, and nanoelectronics.
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