4.8 Article

Mechanically Robust Interface at Metal/Muscovite Quasi van der Waals Epitaxy

Journal

ACS APPLIED MATERIALS & INTERFACES
Volume -, Issue -, Pages -

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsami.3c09129

Keywords

van der Waals epitaxy; muscovite; thermal actuation; flexible; STEM

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Quasi van der Waals epitaxy is a method to construct combinations of 2D and 3D materials. The interface structure and mechanical robustness of metal/muscovite systems have been studied. The anisotropic thermal expansion and thermal stress tolerance in the silver/muscovite heteroepitaxy have been discovered and demonstrated. The electrothermal and photothermal methods show fast response to thermal stress, proving the interface robustness.
Quasi van der Waals epitaxy is an approach to constructing the combination of 2D and 3D materials. Here, we quantify and discuss the 2D/3D interface structure and the corresponding features in metal/muscovite systems. High-resolution scanning transmission electron microscopy reveals the atomic arrangement at the interface. The theoretical results explain the formation mechanism and predict the mechanical robustness of these metal/muscovite quasi van der Waals epitaxies. The evidence of superior interface quality is delivered according to the outstanding performance of the designed systems in both retention (>10(5) s) and cycling tests (>10(5) cycles) through electromechanical measurements. With high-temperature X-ray reciprocal space mapping, the unique anisotropy of thermal expansion is discovered and predicted to sustain the thermal stress with a sizable thermal actuation. A maximum bending curvature of 264 m(-1) at 243 degree celsius can be obtained in the silver/muscovite heteroepitaxy. The electrothermal and photothermal methods show a fast response to thermal stress and demonstrate the interface robustness.

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