4.0 Review

Plasma assisted approaches toward high quality transferred synthetic graphene for electronics

Journal

NANO EXPRESS
Volume 4, Issue 1, Pages -

Publisher

IOP Publishing Ltd
DOI: 10.1088/2632-959X/acbc91

Keywords

CVD graphene; plasma; transfer; imperfections; repair

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Graphene has attracted significant attention in various fields, especially in microelectronic applications, due to its unique physical and electrical properties. However, the commonly used wet transfer technique for synthesizing graphene often leads to structural damage and surface contamination, limiting its use in high-performance devices. This review focuses on the advanced plasma treatment, which can play a crucial role in improving the quality of graphene throughout its growth and transfer process, and presents promising pathways for future applications.
Graphene has received much attention in multiple fields due to its unique physical and electrical properties, especially in the microelectronic application. Nowadays, graphene can be catalytically produced on active substrates by chemical vapor deposition and then transferred to the target substrates. However, the widely used wet transfer technique often causes inevitable structural damage and surface contamination to the synthetic CVD graphene, thus hindering its application in high-performance devices. There have been numerous reviews on graphene growth and transfer techniques. Thus, this review is not intended to be comprehensive; instead, we focus on the advanced plasma treatment, which may play an important role in the quality improvement throughout the growth and transfer of graphene. Promising pathways for future applications are also provided.

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