Journal
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Volume 41, Issue -, Pages 513-518Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2015.10.027
Keywords
Gallium oxide; Nanostructures; Raman scattering; Thermal oxidation
Categories
Funding
- Consejo Nacional de Ciencia y Tecnologia (CONACyT)-Mexico [152155, 178131]
Ask authors/readers for more resources
Ga2O3 were synthesized by controlled thermal oxidation of GaAs substrates at atmospheric pressure. The crystalline structure and vibrational modes were studied as a function of growth temperature within a range of 750-950 degrees C. Samples grown in the range of 750-850 degrees C present nanostructured surface and the samples obtained at higher temperature are oriented to the (004) beta-phase. Crystalline structure was confirmed by X-ray diffraction, and Raman scattering studies. The evolution of the surface morphology was analyzed by atomic force microscopy, and scanning electron microscopy. (C) 2015 Elsevier Ltd. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
