Journal
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Volume 42, Issue -, Pages 150-154Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2015.09.013
Keywords
Tungsten oxide; WO3; Water splitting; Sputtering
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Tungsten oxide films with different thickness were grown by sputtering deposition. Analysis of sample morphology showed that the films were constituted by sub-micrometric columnar structures, with diameters in the range 100-500 nm. As-deposited films revealed an almost-amorphous crystal structure and a wide optical band-gap of about 3.28 eV. Thermal annealing at 500 degrees C was used to promote the formation of a monoclinic WO3 crystal structure and the reduction of the band-gap. Photo-electrochemical. characterizations were used to compare the responses of the different films and to evaluate their possible use in water splitting applications. (C) 2015 Elsevier Ltd. All rights reserved.
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