Epitaxial growth of ((2)over-bar01) β-Ga2O3 on (0001) sapphire substrates by halide vapour phase epitaxy

We report on Ga2O3 deposition on c-plane sapphire substrates by hydride vapour phase epitaxy using metallic gallium, hydrogen chloride and dry air as precursors. High deposition rate up to 250 mu m/h has been realized. As confirmed by X-ray diffraction and micro-Raman measurements, produced films consisted of pure monoclinic beta-Ga2O3 phase and were ((2) over bar 01) oriented. The full width at half maximum (FWHM) for ((2) over bar 01) rocking curve was decreasing with increasing GaCl flow. The narrowest FWHM of 20 arcmin has been detected. (C) 2016 Elsevier Ltd. All rights reserved.