Journal
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Volume 41, Issue -, Pages 155-161Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2015.07.028
Keywords
Polymer-matrix composites (PMCs); Electrical properties; Interface/interphase
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Funding
- UGC (Major Research Project), New Delhi
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This paper reports the frequency dependence of admittance measurements i.e C-V and G/omega-V characteristics of Al/Al2O3/PVA:n-ZnSe MIS diode. The interface states (N-ss) and series resistance (R-s) of the MIS diode strongly influence the C-V-f and G/omega-V-f characteristics. The conductance method is used to calculate the series resistance (R-s), the density of states (N-ss), insulator layer capacitance and thickness. The frequency dependent dieclectric parameters such as dielectric constant (epsilon'), dielectric loss (epsilon), loss tangent (tan delta) and a.c. electrical conductivity (sigma(ac)) has been calculated and which are also responsible for observed frequency dispersion in C-V and G/omega curves. (C) 2015 Elsevier Ltd. All rights reserved.
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