Journal
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Volume 46, Issue -, Pages 23-28Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2016.02.001
Keywords
Annealing; Interface; Density of states; Two-dimensional numerical simulation
Categories
Funding
- National High-tech R&D Program of China (863 Program) [2015AA033406]
- Science and Technology Commission of Shanghai Municipality [13520500200, 14XD1401800]
- Provincial Science and Technology Project of Guangdong Province [20158090915001]
Ask authors/readers for more resources
The properties of solution-processed Al2O3 thin films annealed at different temperatures were thoroughly studied through thermogravimetry-differential thermal analysis, UV-vis-NIR spectrophotometer measurements, scanning electron microscopy, X-ray diffraction, atomic force microscopy and a series of electrical measurements. The solution-processed ZnInSnO thin films transistors (TFTs) with the prepared Al2O3 dielectric were annealed at different temperatures. The TFTs annealed at 600 degrees C have displayed excellent electrical performance such as the field-effect mobility of 116.9 cm(2) V-1 s(-1) and a subthreshold slope of 93.3 mV/dec. The performance of TFT device could be controlled by adjusting the annealing temperature. The results of two-dimensional device simulations demonstrate that the improvement of device performance are closely related with the reduction of interface defects between channel and dielectric and subgap density of stats (DOS) in the channel layer. (C) 2016 Elsevier Ltd. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available