Journal
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Volume 47, Issue -, Pages 1-6Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2016.02.006
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Funding
- KAKENHI [15H04113]
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Science, CT and Future Planning [NRF-2015R1A2A2A01007289]
- Grants-in-Aid for Scientific Research [15H04113] Funding Source: KAKEN
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We have investigated the contact resistivity of GeCu2Te3 (GCT) phase change material to a W electrode using the circular transfer length method (CTLM). The contact resistivity rho(c) of as-deposited amorphous GCT to W was 3.9 x 10(-2) Omega cm(2). The value of rho(c) drastically decreased upon crystallization and crystalline GCT that annealed at 300 degrees C showed a rho(c) of 4.8 x 10(-6) Omega cm(2). The rho(c) contrast between amorphous (as-deposited) and crystalline (annealed at 300 degrees C) states was larger in GCT than in conventional Ge2Sb2Te5 (GST). Consequently, it was suggested from a calculation based on a simple vertical structure memory cell model that a GCT memory cell shows a four times larger resistance contrast than a GST memory cell. (C) 2016 Elsevier Ltd. All rights reserved.
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