Related references
Note: Only part of the references are listed.Nanoscale Stress Localization Effects on the Radiation Susceptibility of GaN High-Mobility Transistors
Md Abu Jafar Rasel et al.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS (2022)
Heuristic Detection of the Most Vulnerable Regions in Electronic Devices for Radiation Survivability
Sergei P. Stepanoff et al.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2022)
Examining Different Regimes of Ionization-Induced Damage in GaN Through Atomistic Simulations
Miguel C. Sequeira et al.
SMALL (2022)
Single Event Transients Detection in AD844 Operational Amplifier by Utilizing Ultra-fast Pulsed Laser System
Cheng Gu et al.
2020 IEEE RADIATION EFFECTS DATA WORKSHOP (IN CONJUNCTION WITH 2020 NSREC) (2020)
Application of Two-Photon-Absorption Pulsed Laser for Single-Event-Effects Sensitivity Mapping Technology
Cheng Gu et al.
MATERIALS (2019)
Steering chemical reactions with force
Sergi Garcia-Manyes et al.
NATURE REVIEWS CHEMISTRY (2017)
Correction of Single Event Latchup Rate Prediction Using Pulsed Laser Mapping Test
Y. -T. Yu et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2015)
Effects of applied strain on radiation damage generation in body centered cubic iron
Benjamin Beeler et al.
JOURNAL OF NUCLEAR MATERIALS (2015)
Comparative Analysis of Mechanical Strain and Silicon Film Thickness on Charge Collection Mechanisms of Nanometer Scaled SOI Devices Under Heavy Ion and Pulsed Laser Irradiation
M. Gaillardin et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2014)
Investigations of the ionizing radiation induced effects in ultra-thin strained-silicon layers on insulator using confocal microscopy measurements
M. Gaillardin et al.
JOURNAL OF NON-CRYSTALLINE SOLIDS (2011)
Mixed-Mode Simulation of Bit-Flip With Pulsed Laser
F. Rogelio Palomo et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2010)
Impact of heavy ion energy and nuclear interactions on single-event upset and latchup in integrated circuits
P. E. Dodd et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2007)
Laser SEE sensitivity mapping of SRAM cells
A. M. Chugg et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2007)
Total-ionizing-dose effects on isolation oxides in modern CMOS technologies
Hugh J. Barnaby et al.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS (2007)
Laser mapping of SRAM sensitive cells:: A way to obtain input parameters for DASIE calculation code
F. Miller et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2006)
Engineering strained silicon on insulator wafers with the Smart Cut™ technology
B Ghyselen et al.
SOLID-STATE ELECTRONICS (2004)
Three-dimensional mapping of single-event effects using two photon absorption
D McMorrow et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2003)
Breaking bonds by mechanical stress: When do electrons decide for the other side?
D Aktah et al.
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY (2002)
SPICE modeling of the transient response of irradiated MOSFETs
V Pouget et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2000)