Journal
MATERIALS RESEARCH BULLETIN
Volume 84, Issue -, Pages 177-184Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.materresbull.2016.08.005
Keywords
Electronic materials; Epitaxial growth; Dielectric properties; Energy storage
Categories
Funding
- Ministry of Sciences and Technology of China through 973-project [2014CB660811]
- National Natural Science Foundation of China [51462027]
- Program for Innovative Research Team in Universities of Inner Mongolia Autonomous Region [NMGIRT-A1605]
- Innovation Lead Project of Boutao [CX5015-8]
- Innovation Program of Inner Mongolia University of Science and Technology [2014QNGG01]
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The enhancement of the energy-storage performance and electrocaloric effect (ECE) was achieved via orientation control. The 1.5-mu m-(Pb0.97La0.02)(Zr0.73Sn0.22Ti0.05)O-3 (PLZST) antiferroelectric (AFE) thick films with (111), (110), and (100) crystallographic orientations were successfully prepared via a sol-gel method. It was found that both the enhanced energy-storage density of 13.5 J/cm(3) at 900 kV/cm and the corresponding temperature reduction of Delta T = 28.1 degrees C at room temperature were obtained in the PLZST thick film with (111) orientation due to a high polarization. Moreover, these films with different orientations display a small leakage current density at the room temperature. These results suggest that both energy-storage properties and cooling performance in AFEs could be optimized by the proper orientation control. (C) 2016 Elsevier Ltd. All rights reserved.
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