Journal
MATERIALS RESEARCH BULLETIN
Volume 79, Issue -, Pages 90-96Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.materresbull.2016.03.017
Keywords
Optical materials; Thin films; Optical properties; Electrical properties; Sputtering
Categories
Funding
- Ministry of Science and Technology [MOST 103-2221-E-244-018, MOST 104-2221-E-244-005-]
Ask authors/readers for more resources
Gallium-doped zinc oxide (GZO) thin films were deposited on flexible polyethylene naphthalate substrates using radio frequency (RF) magnetron sputtering. The resulting GZO thin films were polycrystalline, displaying a hexagonal wurtzite-type crystal structure with a preferred grain orientation in the (002) direction. The covalent bond length of the films decreased as the RF deposition power increased, an inverse trend to that of the residual stress. In the transmission spectra, the absorption edge was about 380 nm, and the optical transmittance decreased from 93.2% to 88.6% in the visible range as the RF deposition power increased from 75 to 150 W. A minimum resistivity of 2.994 x 10(-3) Omega-cm was obtained for the film deposited at 125 W, with a Hall mobility of 8.652 cm(2) V s(-1) and a carrier concentration of 6.3417 x 10(19) cm(-3). The figure of merit results indicated that the film deposited at 125 W possessed satisfactory optical and electrical properties for potential applications. (C) 2016 Elsevier Ltd. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available