Journal
MATERIALS LETTERS
Volume 182, Issue -, Pages 363-366Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.matlet.2016.07.024
Keywords
Corrosion; Porous materials; Semiconductors; GaN; Photoelectrode
Funding
- National Natural Science Foundation of China [21273272]
- Key Research Program of Jiangsu Province [BE2015073]
- National High Technology Research and Development Program of China [Y5DBC11001]
Ask authors/readers for more resources
Here we report an environment-friendly approach to fabricate porous GaN photoelectrode using ionic liquid as the etchant. SEM images revealed photo-assisted electrochemical etching (PECE) has better etching effect than electrochemical etching (ECE). Furthermore, Raman spectra demonstrated porous GaN obtained by PECE has better lattice integrity than that obtained by ECE. The photocurrent of porous GaN prepared by PECE is six times and two times of planar and porous GaN fabricated by ECE, respectively. Above results indicated porous GaN obtained by PECE can be a promising photoelectrode for optoelectronic applications. (C) 2016 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available