Journal
MATERIALS LETTERS
Volume 162, Issue -, Pages 135-137Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.matlet.2015.09.137
Keywords
Ceramics; Thin films; Piezoelectric materials; Ferroelectrics; Dielectrics
Funding
- Specialized Research Fund for the Doctoral Program of Higher Education of China [20120072130001]
- National Natural Science Foundation of China [51332003, 51502127]
- State Key Laboratory of New Ceramic and Fine Processing Tsinghua University [KF201510]
- Innovative Research Groups of the National Natural Science Foundation of China [51121064]
- Project of Shandong Province Higher Educational Science and Technology Program [J14LA10]
- Natural Science Foundation of Shandong Province of China [ZR2014JL030]
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The Bi0.5Na0.5TiO3-BaTiO3-SrTiO3 (BNT-BT-ST) thin films were grown on the LaNiO3 buffered MgO, SrTiO3 and LaAlO3 single crystal substrates, respectively. A systematic stress change of the thin films was obtained. The effect of increasing tensile stress on phase transition temperature is attributed to the suppression of in-plane polarization. The tensile stress reduces the unit cell along electric field, remnant polarization and dielectric permittivity, while enhances the piezoelectric response in this study. The high strain level (0.25%) and piezoelectric coefficient (d(33)*=200 pm/V) were obtained. These results suggest that the piezoelectric properties of BNT-BT-ST thin films can be adjusted by choosing different stress magnitude. (C) 2015 Elsevier B.V. All rights reserved.
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