Journal
MATERIALS LETTERS
Volume 171, Issue -, Pages 121-124Publisher
ELSEVIER
DOI: 10.1016/j.matlet.2016.02.056
Keywords
Semiconductors; Thin films RT; Ferromagnetism; Ion implantation
Funding
- Fundamental Research Funds for the Central Universities [310421103]
- Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics [KF201404]
- National Natural Science Foundation of China [51171028, 11305009]
- UK Engineering and Physical Sciences Research [EP/D070406/1]
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Different concentrations of arsenic ions have been introduced into high quality O polar ZnO films prepared by rf-plasma assisted molecular beam epitaxy on sapphire substrates by ion implantation. Rutherford Backscattering/Channeling, x-ray diffraction, Raman spectroscopy and optical absorption measurements have been carried out to characterize the implantation induced disorder in the ZnO films. Room temperature ferromagnetism has been observed for the films implanted with As dose higher than 6 x 10(18) cm(-3). The size of the observed moment is too large to be attributed to the As related defect complex (As-Zn-2V(Zn)) and is attributed to defects introduced by the ion implantation process. This was confirmed by the observation that the magnetization could be removed by annealing the films. (C) 2016 Elsevier B.V. All rights reserved.
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