4.7 Article

The formation of dark holes and their significant influences on microwave dielectric properties of Ba4.2Nd9.2Ti18O54 ceramics

Journal

MATERIALS CHARACTERIZATION
Volume 111, Issue -, Pages 81-85

Publisher

ELSEVIER SCIENCE INC
DOI: 10.1016/j.matchar.2015.11.016

Keywords

XPS; TEM; Ceramic; Oxygen vacancy; Microwave dielectric properties; Ba4.2Nd9.2Ti18O54

Funding

  1. Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD)
  2. Opening Project of State Key Laboratory of High Performance Ceramics and Superfine Microstructure [SKL201309SIC]
  3. Science and Technology Projects of Guangdong Province [2011A091103002]
  4. College Industrialization Project of Jiangsu Province [JHB2012-12]

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Ba4.2Nd9.2Ti18O54 (BNT) ceramics have been prepared by solid-state ceramic method. Dark holes were observed in the center of the ceramics. All the samples showed typical columnar grain morphology in SEM images. TEM and XRD analysis indicated that there was only a BaNd2Ti4O12 (JCPDS Card No. 44-0061) phase in the ceramics. In HRTEM images, the grain boundary was clear and no impurities and defects were observed. The XPS results showed the difference in valence of Ti. Ti3+ ions appeared in all the samples. The Q x f value significantly dropped when the amount of Ti3+ ions was considerable. BNT ceramics sintered at high temperature (1300 degrees C to 1400 degrees C) usually contain dark holes in the center (caused by Ti3+ ions) which could lead to a significant drop in Q x f value. (C) 2015 Elsevier Inc. All rights reserved.

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