External magnetic field effect on synthesis palladium nanoparticles via laser ablation deposited on porous silicon as a gas sensor application

In this study, palladium (Pd) nanoparticles were prepared using a laser ablation method and investigated using XRD, transmission electron microscopy (TEM), microscopic atomic force (AFM), UV-vis, PL, and various We investigated the fabrication of gas sensors with laser energy, Pd nanoparticles were generated by laser ablation in liquid applying a magnetic field with a pulse energy of 660 mJ for 200 shots, and Pd NPs were precipitated onto porous silicon (PS) using a drop casting process. The specimen's nanocrystalline had been revealed by the XRD diffraction pattern. AFM demonstrated a growth in the agglomeration of Pd NPs; the TEM results indicated that the average particle size of Pd particles between 52.44 and 16.07 nm is decreased in presence of magnetic field. Photoluminescence detector electronic properties of energy band gap described increases from 3.16 to 3.44 eV. The sensor sensitivity for NO2 and H2S gas sensors constructed from the prepared material were also examined in relation to temperature changes.For Pd NPs/PS/Si, gas sensors have a maximum sensitivity of around 75.6% at 100 degrees C for sample prepare 660 mJ without magnetic field, but the highest sensitivity in the presence of a magnetic field was 28.72% at 25 degrees C for H2S gas. Additionally, it can achieve maximum sensitivity of Pd NPs/PS/Si at gas sensor to 63.09% and 55.66% in both the presence and absence of a magnetic field for NO2 gas, respectively. Effect of temperature change on reaction time and sensor sensitivity

Automated summary

Palladium (Pd) nanoparticles were prepared using laser ablation and characterized using various techniques. The presence of a magnetic field reduced the average particle size of Pd particles. Gas sensors constructed from the prepared Pd nanoparticles showed varying sensitivity to NO2 and H2S gases at different temperatures. The study also investigated the effect of temperature on reaction time and sensor sensitivity.