N-type H2-doped amorphous silicon layer for solar-cell application

In this work, we report that hydrogen (H-2) doped in n-type a-Si:H thin films strongly influences the electronic correlation in increasing the conversion output power of solar cells. Type n a-Si:H thin films were grown using PECVD on ITO substrates with various H2-doping, to obtain various thin films for solar-cell applications. N-type a-Si:H thin films were prepared, and then characterized using ellipsometric spectroscopy, atomic force microscopy, Fourier transform infrared spectroscopy, and transmission electron microscopy. The addition of doped-H-2 to the thin layer shows a decrease in optical conductivity, while the energy gap in the thin layer shows a significant increase in the a-Si:H-type thin layer. Our results show that H-2 doping plays a very important role in the electronic structure, which is indicated by the significant energy gap difference. On the other hand, the bond structure of each H2-doped thin film showed a change from amorphous to nanocrystalline structures which were evenly distributed in each H-2-doped bonding. Overall, we believe that the addition of doped-H-2 to our findings could help increase the power conversion output of the solar cell due to the modification of the electronic structure.

Automated summary

In this study, we investigated the effect of hydrogen doping on the electronic correlation and power conversion output of solar cells. N-type a-Si:H thin films were grown with various H2-doping levels, and their characteristics were analyzed. The addition of doped-H-2 showed a decrease in optical conductivity and a significant increase in the energy gap of the thin layer. The bond structure also changed from amorphous to nanocrystalline structures. Overall, our findings suggest that H-2 doping can modify the electronic structure and potentially increase the power conversion output of solar cells.