Probing the Photo-Activated Switching Dynamics of Halide Perovskite Memristors

Thehysteresis effects due to electronic-ionic conductivity canbe utilized to develop memory devices for information storage andbrain-like computing. Halide perovskites-based devices exhibit frequenthysteresis in their current-voltage curves, making them suitablefor neuromorphic computing. Despite recent advances in this field,the exact mechanism behind switching between high and low resistivestates in halide perovskite memristors is still under debate. Thisstudy aims to understand the switching mechanism and charge transportin the ITO/MAPbBr(3)/Au device's geometry by analyzingtheir SET-RESET states through current-voltage characteristicsand impedance spectroscopy at different applied biases and under differentlight intensities. A clear shift in the SET voltage due to increasedlight power correlates with the electronic-ionic coupling andion migration. In the impedance spectroscopy measurement, the AC conductivityshows a negative slope at the SET state, especially at the low-frequencyregime due to the ion-induced voltage, which gets screened by photogeneratedcharge carriers.

Automated summary

Hysteresis effects in halide perovskite-based devices can be used for memory devices and brain-like computing. The exact mechanism behind the switching between high and low resistance states in halide perovskite memristors is still under debate. This study aims to understand the switching mechanism and charge transport by analyzing the SET-RESET states through current-voltage characteristics and impedance spectroscopy of an ITO/MAPbBr(3)/Au device at different applied biases and light intensities.