Recent developments of block copolymers in nonvolatile memory and artificial synapses

The rapid development of artificial intelligence has significantly accelerated computational calculation and enlarged the demands in information storage. Therefore, high-performance memory devices based on new architectures and functionalities, such as resistive memory, transistor memory, and phase change memory, along with their applications in neuromorphic computing and artificial synapse have arisen extensive interest among researchers. In order to improve the memory performance, block copolymer electrets with diversified self-assembled structures have been extensively developed, and their structure-performance properties have been investigated. Therefore, in this focused review, a variety of block copolymers combining incompatible polymers, such as hydrophilic/hydrophobic, polar/nonpolar, and conjugated/insulating polymers, are introduced in this focused review. The design concepts and recent advances of block copolymers in nonvolatile memory and artificial synapses were addressed. With these divergent structure designs, block copolymers are regarded as potential candidates to provide high performance in memory device applications. This review sheds light on the great potential and importance of block copolymers for optoelectronic device applications.

Automated summary

The rapid development of artificial intelligence has led to an increase in computational power and demand for information storage. This has sparked extensive interest in high-performance memory devices, such as resistive memory, transistor memory, and phase change memory, as well as their applications in neuromorphic computing and artificial synapses. Block copolymer electrets with diverse self-assembled structures have been developed to enhance memory performance, and their structure-performance properties have been studied. This review highlights the potential and importance of block copolymers for optoelectronic device applications.