hBN-Layer-Promoted Heteroepitaxy in Reactively Sputter-Deposited MoSX≈2(0001)/Al2O3(0001) Thin Films: Implications for Nanoelectronics

We show that van der Waals (vdW)-bonded hexagonal boron = 2.0 +/- 0.1) thin films on Al2O3(0001) substrates. hBN layers are grown on Al2O3(0001) via pyrolytic cracking of borazine (similar to 6 x 10(4) L) at 1373 K and the MoSx layers are deposited in an ultrahigh-vacuum system via reactive directcurrent magnetron sputtering of Mo in an Ar/H2S gas mixture at 1073 K on bare and hBN-covered Al2O3(0001). Using in situ low-energy electron diffraction and Auger electron spectroscopy along with ex situ X-ray diffraction, X-ray photoelectron and Raman spectroscopies, and transmission electron microscopy, we determine the as-deposited MoSx layer composition and crystallinity. We obtain highly 0001-oriented,similar to 20-nm-thick, 2H-structured MoSx multilayers with better crystalline quality on hBN/Al2O3(0001) than on Al2O3(0001). We suggest that hBN buffer layer enhances surface diffusion of depositing species, compared to bare Al2O3(0001), leading to an observed improvement in the crystallinity of MoSx layers. We expect that our results are likely to have broad implications in nanoelectronic device fabrication.

Automated summary

By growing van der Waals-bonded hexagonal boron nitride (hBN) layers on Al2O3 (0001) substrates and depositing MoSx layers via reactive magnetron sputtering, researchers obtain MoSx multilayers with higher crystalline quality on hBN/Al2O3 (0001) compared to bare Al2O3 (0001). The presence of hBN buffer layer enhances surface diffusion, resulting in improved crystallinity of MoSx layers. These findings have implications for nanoelectronic device fabrication.