4.7 Article

Schottky Junction Made from a Nanoporous Au and TiO2 Film for Plasmonic Photodetectors

Journal

ACS APPLIED NANO MATERIALS
Volume 6, Issue 6, Pages 4619-4625

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsanm.3c00093

Keywords

plasmon; hot electron; Schottky barrier; photodetector; nanoporous Au film; TiO2

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A plasmonic photodetector was constructed by using a metal/TiO2 Schottky junction with a solution-processed continuous nanoporous Au film as the light absorption layer. The plasmonic properties of the Au film enable the absorption of broad-spectrum visible light and the generation of hot electrons, which can be collected into the TiO2 film to generate a steady-state photocurrent with appreciable photoresponse to visible light.
The generation, transfer, and collection of plasmon-derived hot electrons represent a distinctive pathway for the utilization of solar energy. Herein, we report the construction of a plasmonic photodetector from a metal/TiO2 Schottky junction, featuring using a solution-processed continuous nanoporous Au film (CNAuF) as the light absorption layer and an n-type TiO2 film as the electron acceptation layer. Because of its plasmon properties, the CNAuF can absorb broadband light in the visible region and in turn creates abundant hot electrons (via the decay of its plasmon). Using a CNAuF/TiO2 Schottky junction, these hot electrons can be collected into the TiO2 film to generate a steady-state photocurrent. As a result, the plasmonic photodetector constructed from the CNAuF/TiO2 Schottky junction delivers an appreciable photoresponse to visible light. Taking the photoresponse to 532 nm light as an example, this plasmonic photodetector delivers a high responsivity of 0.06 A/W, a specific detectivity of 3.9 x 109 Jones, and an external quantum efficiency of 13.8%, with a rise time and a decay time being 110 and 120 ms, respectively. The bottom-up nature of the solution-processed strategy offers great flexibility to tune the plasmonic nanostructure and in turn its optical properties, thereby creating many possibilities for the creation of nextgeneration plasmonic photoelectric devices and beyond.

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