Journal
ACS APPLIED NANO MATERIALS
Volume 6, Issue 7, Pages 5075-5080Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsanm.2c03247
Keywords
printed electrodes; transistors; flexography; nanoporous stamps; SWCNT networks
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To achieve high-performance printed electronic devices, scalable and cost-effective printing of high-quality metallic electrodes with narrow gaps is desirable. This study demonstrates short channel transistors (<10 μm) with thin electrodes (<100-200 nm) fabricated by flexographic printing with nanoporous stamps, using single-wall carbon nanotubes as the network semiconductor. The measured performance of these transistors meets or exceeds those of previously reported SWCNT network transistors fabricated by alternative printing methods.
To achieve high-performance printed electronic devices, scalable and cost-effective printing of high-quality metallic electrodes with narrow gaps, such as for transistors with short channel lengths, is desirable. Here, we demonstrate short channel (<10 mu m) transistors, using thin (<100-200 nm) electrodes fabricated by flexographic printing with nanoporous stamps, with single-wall carbon nanotubes (SWCNTs) as the network semiconductor. The nanoporous stamps comprise polymer-coated vertically aligned carbon nanotubes and facilitate control of the printed ink thickness in the 50-200 nm range. The measured on-off ratio and mobility meet or exceed those of previously reported SWCNT network transistors fabricated by alternative printing methods.
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