Tailoring the epitaxial growth of oriented Te nanoribbon arrays

As an elemental semiconductor, tellurium (Te) has been famous for its high hole -mobility, excellent ambient stability and topological states. Here, we realize the controllable synthesis of horizontal Te nanoribbon arrays (TRAs) with an angular interval of 60 degrees on mica substrates by physical vapor deposition strategy. The growth of Te nanoribbons (TRs) is driven by two factors, where the intrinsic quasi-one-dimensional spiral chain structure promotes the elongation of their length; the epitaxy relationship between [110] direction of Te and [110] direction of mica facilitates the oriented growth and the expansion of their width. The bending of TRs which have not been reported is induced by grain boundary. Field-effect transistors based on TRs demonstrate high mobility and on/off ratio corresponding to 397 cm(2) V-1 s(-1)and 1.53105, respectively. These phenomena supply an opportunity to deep insight into the vapor-transport synthesis of low -dimensional Te and explore its underlying application in monolithic integration.

Automated summary

Through the physical vapor deposition strategy, controllable synthesis of horizontal tellurium nanoribbon arrays on mica substrates with an angular interval of 60 degrees is achieved. The growth of tellurium nanoribbons is driven by the quasi-one-dimensional spiral chain structure and the epitaxy relationship between tellurium and mica. The bending of the nanoribbons, induced by grain boundary, is a new phenomenon. Field-effect transistors based on tellurium nanoribbons demonstrate high mobility and on/off ratio.