Multilevel resistive switching in stable all-inorganic n-i-p double perovskite memristor

Memristors are promising information storage devices for commercial applications because of their long endurance and low power consumption. Particularly, perovskite memristors have revealed excellent resistive switching (RS) properties owing to the fast ion migration and solution fabrication process. Here, an n-i-p type double perovskite memristor with ITO/SnO2/Cs2AgBiBr6/NiOx/Ag'' architecture was developed and demonstrated to reveal three resistance states because of the p-n junction electric field coupled with ion migration. The devices exhibited reliable filamentary with an on/off ratio exceeding 50. The RS characteristics remained unchanged after 1000 s read and 300 switching cycles. The synaptic functions were examined through long-term depression and potentiation measurements. Significantly, the device still worked after one year to reveal long-term stability because of the all-inorganic layers. This work indicates a novel idea for designing a multistate memristor by utilizing the p-n junction unidirectional conductivity during the forward and reverse scanning.

Automated summary

This study presents the design and performance of a double perovskite memristor with the utilization of p-n junction unidirectional conductivity for multistate storage. The device showed reliable resistive switching characteristics and long-term stability due to the all-inorganic layers.