Highly Conductive Tungsten-Doped Tin(IV) Oxide Transparent Electrodes Delivered by Lattice-Strain Control

Alternatives to tin-doped indium oxide transparent electrodes are needed to meet the growing demand for modern electronic devices.Here, we present a chemical vapor deposition route to tungsten-dopedSnO(2) thin films with resistivities as low as 5.9 x10(-4) omega cm and electron mobilities as highas 30 cm(2) V-1 s(-1).Le Bail fitting of the XRD data showed that the substitutional dopant,tungsten-(V) causes minimal distortion to the SnO2 unitcell due to its radius closely matching that of tin-(IV). Furthermore,crystallographic preferential orientation in the [200] direction that is thought to facilitate a high mobility was also seen. X-rayphotoelectron spectroscopy analysis suggests that W is present inthe +5 state, as opposed to +6, therefore minimizing ionized impurityscattering, hence also helping achieve the observed high electronmobilities. The tungsten-doped films had optical band gaps of 3.7eV, thus enabling transparency to visible light.

Automated summary

Alternatives to tin-doped indium oxide transparent electrodes are required. Tungsten-doped SnO2 thin films with low resistivities and high electron mobilities were obtained using chemical vapor deposition. The tungsten dopant had minimal distortion to the SnO2 unit cell and resulted in crystallographic preferential orientation in the [200] direction. X-ray photoelectron spectroscopy analysis indicated that tungsten was present in the +5 state, minimizing ionized impurity scattering and achieving high electron mobilities. The tungsten-doped films had an optical band gap of 3.7 eV, making them transparent to visible light.