Raising n-Type Thermoelectric Performance in (Te, Zn)-Codoped CuAgSe

We have successfully fabricated undopedand (Te, Zn)-codopedn-typeCuAgSe polycrystals. For doping studies, we kept 5% Te over Se andchanged from 0 to 10% Zn over Cu. (Te, Zn) codoping on CuAgSe reducesthe lattice thermal conductivity to about 0.3 W m(-1) K-1 at 673 K and increases the electrical conductivity.In particular, a ZT value of 0.91 was achieved at623 K, which is the highest ZT value in n-type CuAgSe.Our results thus indicate that Te and Zn codoping is a potential wayto improve the thermoelectric performance of n-type CuAgSe.

Automated summary

We fabricated undoped and (Te, Zn)-codoped n-type CuAgSe polycrystals successfully. The (Te, Zn) codoping on CuAgSe reduces the lattice thermal conductivity to about 0.3 W m(-1) K-1 at 673 K and increases the electrical conductivity. Particularly, a ZT value of 0.91 was achieved at 623 K, which is the highest ZT value in n-type CuAgSe. Therefore, the Te and Zn codoping is a potential way to improve the thermoelectric performance of n-type CuAgSe.