Charge Carrier Lifetime Determination in Graded Absorber Solar Cells Using Time-Resolved Photoluminescence Simulations and Measurements

Thin-film photovoltaic device efficiencies are limited by carrier recombination, thus understanding recombination mechanisms is critical for performance improvements. Bulk minority carrier lifetime (tau(bulk)) is a critical parameter for solar cells but is difficult to determine in P-N junction devices, especially for high doping. As doping >= 10(16) cm(-3) is required for efficient drift-charge-carrier-collection devices, a method for tau(bulk) determination in doped P-N junction devices is necessary. This work utilizes time-resolved photoluminescence (TRPL) simulations to quantify bulk and interface recombination properties in highly doped, graded absorber CdSeTe structures. The two methods developed here for tau(bulk) determination include utilization of an instantaneous lifetime representation to guide TRPL fitting and direct comparison between measured and simulated decays. Simulations verified that both methods are valid for state-of-the-art device architectures which include graded bandgap absorbers, graded doping, and graded lifetimes. Shifts in the dominant recombination mechanism are identified for sufficiently long tau(bulk), where front and back interface quality plays a more prominent role. Evaluation of surface recombination velocities and conduction band offset illustrate electro-optical advantages of a positive conduction band offset and highlight the necessity of improved interfaces as bulk quality in photovoltaic devices improves.

Automated summary

The efficiencies of thin-film photovoltaic devices are limited by carrier recombination. It is crucial to understand recombination mechanisms to enhance performance. Determining the bulk minority carrier lifetime (tau(bulk)) is challenging in P-N junction devices, especially in highly doped ones. This research utilizes time-resolved photoluminescence simulations to quantify recombination properties and develop methods for determining tau(bulk) in highly doped CdSeTe structures.