4.7 Article

Charge Carrier Dynamics in Planar Heterojunction Organic Solar Cells

Journal

SOLAR RRL
Volume 7, Issue 12, Pages -

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/solr.202300267

Keywords

bimolecular recombination; energetic disorder; hole transfer; planar heterojunction organic solar cells

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This study systematically evaluates the impact of ionization energy offset on charge transfer efficiency and charge carrier dynamics in different types of organic solar cells. It reveals that an ionization energy offset of approximately 0.5 eV contributes to efficient hole transfer and subsequent free charge generation, while reducing bimolecular charge recombination and triplet generation. The findings emphasize the importance of sizeable donor-acceptor ionization energy offsets for high-efficiency donor/acceptor material and device design in nonfullerene organic solar cells.
The ionization energy (IE) offset of a donor-acceptor pair provides the driving force for hole transfer and subsequent free charge carrier generation in low-bandgap nonfullerene organic solar cells (OSCs). However, the interfacial energetic landscape in bulk heterojunction OSCs is determined by the materials' electronic structure and intermolecular interactions at the donor/acceptor interface, causing local energy-level shifts and disorder. Herein, the impact of the IE offset on the charge transfer efficiency and charge carrier dynamics is systematically evaluated by characterizing PM6/ITIC, PM6/IT-2Cl, and PM6/IT-4Cl planar heterojunction (PHJ) solar cells. Ultrafast spectroscopy and time-resolved charge carrier density measurements reveal that an IE offset of about approximate to 0.5 eV leads to efficient hole transfer and subsequent free charge generation. Furthermore, bimolecular charge recombination and consequently triplet generation are significantly reduced in systems with high IE offset. This work underlines the importance of sizeable donor-acceptor IE offsets in PHJ nonfullerene OSCs as critical for high-efficiency donor/acceptor material and device design.

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