A Novel High-Speed and Low-PDP Approximate Full Adder Cell for Image Blending

This paper presents a new and high-performance inaccurate Full Adder Cell utilizing the Carbon Nanotube Field Effect Transistor (CNFET) technology. Comprehensive simulations are performed at the transistor and application levels to justify the performance of our design. Simulations performed using the HSPICE tool confirm the significant improvement in the performance of the proposed circuit delay, power-delay product (PDP) and energy-delay product (EDP) compared to competitor designs. Additionally, via a MATLAB tool, the image blending (alpha blending) application uses inaccurate Full Adder cells. Software simulations confirm the suitable quality of the final images according to the image quality evaluation criteria.

Automated summary

This paper presents a new and high-performance inaccurate Full Adder Cell utilizing the Carbon Nanotube Field Effect Transistor (CNFET) technology. Comprehensive simulations are performed to justify the performance of the design at the transistor and application levels. The simulations using HSPICE confirm the significant improvement in circuit delay, power-delay product (PDP) and energy-delay product (EDP) compared to competitor designs. Moreover, software simulations using MATLAB tool confirm the suitable quality of the final images in the image blending application.