Study of ZrS3-based field-effect transistors toward the understanding of the mechanisms of light-enhanced gas sensing by transition metal trichalcogenides

Extending knowledge of the properties of low-dimensional van der Waals materials, including their reactivity to the ambiance, is important for developing innovative electronic and optoelectronic devices. Transition metal trichalcogenides with tunable optical band gaps and anisotropic conductivity are an emerging class among low-dimensional structures with the possibility of gate tunability and photoreactivity. These properties can be combined into light-enhanced field-effect transistor gas sensors. We demonstrated prototype zirconium trisulfide (ZrS3) sensors for nitrogen dioxide, ethanol, and acetone. Photoconductivity and photogating play a critical role in photoinduced gas sensing, with the dominance of the first for blue (470 nm) and green (515 nm) and the second one prevailing for red (700 nm) irradiations. Our results suggest that surface trap states lead both to trapping and scattering of the charge carriers in the channel. The gas detection is guided by charge transfer and modulation of the carrier mobility, resulting in distinct I -V characteristics for selected irradiation conditions.

Automated summary

Extending knowledge of low-dimensional van der Waals materials is crucial for developing innovative electronic and optoelectronic devices. Transition metal trichalcogenides with tunable band gaps and anisotropic conductivity show potential for gate tunability and photoreactivity, making them suitable for light-enhanced gas sensors.