Thiophene-centered PMMA unified thin films with electrical, photoluminescence, and third-order nonlinear optical potentials for optoelectronic applications

In the present work, we have investigated the electrical, linear, and nonlinear optical parameters of thiophene-centering chalcone doped PMMA thin films. Using a standard spray pyrolysis technique, (E)- 1-(thiophen-2- yl)-3-3(3,4,5-trimethonyl) prop-2-en-1-one blended PMMA thin films were deposited for different chalcone concentrations (10%, 30%, and 50% wt.). With the advent of FESEM analysis, the uniform and consistent behavior of the deposited thin film was verified. The optical band gap is found to diverge from 3.83 to 3.77 eV with concentration using UV-visible spectroscopy, and photoluminescence studies show that material emits in the blue band region. The deposited thin films show nonlinear absorption coefficients (& beta;) and third-order nonlinear optical susceptibility Im & chi;(3) in the order of 10-4 cm/W and 10-7 e.s.u., respectively. I-V curves revealed that the electrical conductivity of chalcone doped PMMA thin films ranges from 1.78 to2.39 & mu;S/cm. Non-linear optical findings of deposited thin films are recommended for optoelectronic device applications.

Automated summary

In this study, we investigated the electrical, linear, and nonlinear optical parameters of thiophene-centering chalcone doped PMMA thin films. The deposited thin films showed uniform behavior and consistent performance. The optical properties, including the optical band gap and photoluminescence, varied with chalcone concentration. The nonlinear optical properties of the films make them suitable for optoelectronic device applications.