ZnO nanowire network/4H-SiC heterojunction for improved performance ultraviolet photodetector: The effect of different SiC doping concentrations on photoresponse properties

Zinc Oxide (ZnO) and Silicon Carbide (SiC) are highly promising semiconductors with their heterostructures offering pathways for the next generation of sensing and detecting optoelectronics technologies due to their wide bandgaps. Optoelectric properties of ZnO nanowire network and n-type single crystal 4H-SiC heterojunction ultraviolet (UV) photodetectors have been investigated and compared for two different SiC doping concentra-tions. The fabrication of a high-performance UV photodetector based on a ZnO/4H-SiC heterojunction with high SiC doping concentration of 10(18)/cm(3) was achieved. Its optoelectronic performance was improved compared with either a ZnO UV photodetector or a ZnO/SiC heterojunction photodetector with low SiC doping concen-tration of 10(16)/cm(3). Heterojunction constructing and energy band bending in the ZnO/SiC interface facilitates the spatial separation of the photogenerated electron-hole pairs and the efficient transport of photoinduced charge carriers, which enhances photocurrent and simultaneously enables a quick time response in the device. In addition, carriers tunneling occurs in the heterojunction interface of ZnO/n(+)SiC with narrower depletion region width. This study suggests an opportunity for large-area and high-performance nanostructured optoelectronic devices fabrication based on a simple synthesis process and energy band engineering.

Automated summary

Zinc Oxide (ZnO) and Silicon Carbide (SiC) are highly promising semiconductors with wide bandgaps, and their heterostructures have potential for the next generation of optoelectronics technologies. The optoelectric properties of ZnO nanowires and n-type 4H-SiC heterojunction UV photodetectors were studied and compared for different SiC doping concentrations. A high-performance UV photodetector based on a ZnO/4H-SiC heterojunction with a high SiC doping concentration of 10(18)/cm(3) was successfully fabricated, showing improved optoelectronic performance compared to other devices. The heterojunction structure and energy band bending in the ZnO/SiC interface facilitate spatial separation of electron-hole pairs and efficient transport of charge carriers, enhancing photocurrent and enabling quick time response.