Quantum sensing and imaging with spin defects in hexagonal boron nitride

Color centers in hexagonal boron nitride (hBN) have recently emerged as promising candidates for a new wave of quantum applications. Thanks to hBN's high stability and two-dimensional (2D) layered structure, color centers in hBN can be readily integrated into nanophotonic and plasmonic structures on a chip. More importantly, the recently discovered optically addressable spin defects in hBN provide a quantum interface between photons and electron spins for quantum sensing applications. The most well-studied hBN spin defects, the negatively charged boron vacancy ( V B - ) spin defects, have been used for quantum sensing of static magnetic fields, magnetic noise, temperature, strain, nuclear spins, paramagnetic spins in liquids, RF signals, and beyond. In particular, hBN nanosheets with spin defects can form van der Waals (vdW) heterostructures with other 2D materials for in situ quantum sensing and imaging. This review summarizes the rapidly evolving field of quantum sensing with spin defects in hBN. We introduce basic properties of hBN spin defects, quantum sensing protocols, and recent experimental demonstrations of quantum sensing and imaging with hBN spin defects. We also discuss methods to enhance their sensitivity. Finally, we envision some potential developments and applications of hBN spin defects.

Automated summary

Color centers in hBN, such as the V B - spin defects, have emerged as promising candidates for quantum applications due to their stability and 2D structure. These spin defects can be integrated into nanophotonic and plasmonic structures on a chip, providing a quantum interface between photons and electron spins for quantum sensing applications.